Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor

Authors

P. A. Folkes, U.S. Army Research Laboratory
Doran Smith, U.S. Army Research Laboratory
R. A. Lux, U.S. Army Research Laboratory
W. Zhou, U.S. Army Research Laboratory
R. Thompson, U.S. Army Research Laboratory
R. Moerkirk, U.S. Army Research Laboratory
M. Lemeune, U.S. Army Research Laboratory
P. Cooke, SAIC
K. Brown, Kean University

Document Type

Article

Publication Date

10-7-1996

Abstract

Low-temperature (LT) photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a (LT) GaAs layer in the GaAs substrate have revealed the existence of a substrate voltage. The substrate voltage is manifested by a decrease in the PL transition energies of the quantum-well subbands due to the quantum confined Stark effect. Our results indicate that the substrate voltage is generated by the trapping of holes from the undoped molecular-beam-epitaxy-grown GaAs at the GaAs/LT GaAs interface by the high concentration of arsenic antisite defects in the LT GaAs layer. © 1996 American Institute of Physics.

Publication Title

Applied Physics Letters

First Page Number

2234

Last Page Number

2236

DOI

10.1063/1.117138

Recommended Citation

Folkes, P. A.; Smith, Doran; Lux, R. A.; Zhou, W.; Thompson, R.; Moerkirk, R.; Lemeune, M.; Cooke, P.; and Brown, K., "Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor" (1996). Kean Publications. 2834.
https://digitalcommons.kean.edu/keanpublications/2834